Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues

About The Authors

Yu. V. Terenteva
Altai State University, Barnaul
Russian Federation

L. V. Fomina
Angarsk State Technical Academy, Angarsk
Russian Federation

S. A. Beznosyuk
Altai State University, Barnaul
Russian Federation

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