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Physicochemical conditions of GaAs/GaAsxNy/GaN nanochips stability

N. V. Komarovskih, L. V. Fomina, S. A. Beznosyuk

Abstract


In this work the study of the stability nanochips GaAs / GaAsxNy / GaN is presented. For the calculation of parameters used quantum-chemical and thermodynamic approaches. The calculations of the surface free energy nanochips within the models used show that a significant contribution to the crystalline structure stability of the GaN layer is the molar concentration of nitrogen atoms in the intermediate layer GaAsxNy nanochips GaAs / GaAsxNy / GaN.

Keywords


quantum-chemical calculations; stability of nanochips ; gallium arsenides; gallium nitride; thermodynamics; crystal structure

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References


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DOI: http://dx.doi.org/10.15826/chimtech.2015.2.1.008

Copyright (c) 2015 N. V. Komarovskih, L. V. Fomina, S. A. Beznosyuk

© Chimica Techno Acta, 2014-2018
ISSN 2411-1414 (Online), ISSN 2409-5613 (Print)

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