Physicochemical conditions of GaAs/GaAs x N y /GaN nanochips stability

N. V. Komarovskih; L. V. Fomina; S. A. Beznosyuk

doi:10.15826/chimtech.2015.2.1.008

Physicochemical conditions of GaAs/GaAs_xN_y/GaN nanochips stability

N. V. Komarovskih, L. V. Fomina, S. A. Beznosyuk

Abstract

In this work the study of the stability nanochips GaAs / GaAs_xN_y / GaN is presented. For the calculation of parameters used quantum-chemical and thermodynamic approaches. The calculations of the surface free energy nanochips within the models used show that a significant contribution to the crystalline structure stability of the GaN layer is the molar concentration of nitrogen atoms in the intermediate layer GaAs_xN_y nanochips GaAs / GaAs_xN_y / GaN.

Keywords

quantum-chemical calculations; stability of nanochips ; gallium arsenides; gallium nitride; thermodynamics; crystal structure

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References

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DOI: https://doi.org/10.15826/chimtech.2015.2.1.008

Copyright (c) 2015 N. V. Komarovskih, L. V. Fomina, S. A. Beznosyuk