Fomina, L. V., Angarsk State Technical Academy, Angarsk, Russian Federation

• Vol 2, Issue 1 (2015) - Articles
  Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues
  Abstract  PDF
• Vol 2, Issue 1 (2015) - Articles
  Physicochemical conditions of GaAs/GaAs_xN_y/GaN nanochips stability
  Abstract  PDF

Chimica Techno Acta, 2014-2024
ISSN 2411-1414 (Online)
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